The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Jan. 13, 2000
Brian W. Huber, Allen, TX (US);
Mansour Fardad, Rowlett, TX (US);
Roger D. Norwood, McKinney, TX (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A DRAM memory device having two sets of power buses is provided. Each set includes a first bus having a first potential and a second bus having a second potential, both of which are required to activate a row of memory within a bank of memory. A first row is activated while it is connected to the first set of buses. If it is detected that the activation of a second row connected to the first set of buses will cause a power bump when it is time to deactivate the first row, the first row is switched over to the second set of buses prior to the activation of the second row. The first row can be precharged with the voltages from the second set of buses and the second row can be activated with the voltages from the first set of buses. Thus, the first row can be precharged without being adversely effected by the power bump on the first set of buses which improves the pause performance of the DRAM.