This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2021.
Company Filing History:
Years Active: 2021
Title: Maneesh Mishra: Innovator in Phase Change Memory Structures
Introduction
Maneesh Mishra is a notable inventor based in Boise, ID (US). He has made significant contributions to the field of memory technology, particularly through his innovative work on phase change memory structures. His expertise and creativity have led to advancements that could impact various applications in computing.
Latest Patents
Maneesh holds a patent for a phase change memory structure. This structure includes a memory cell, a dielectric material adjacent to the memory cell, and a bit line. The memory cell features a phase change material layer and a top electrode layer above it. The dielectric material has a top surface that is higher than that of the top electrode layer. The bit line has a non-flat bottom surface that contacts the top surface of the dielectric material and protrudes down to the top surface of the memory cell. This innovative design enhances the performance and efficiency of memory devices.
Career Highlights
Maneesh is currently employed at Intel Corporation, a leading technology company known for its advancements in semiconductor manufacturing and computing solutions. His work at Intel has allowed him to collaborate with some of the brightest minds in the industry, contributing to groundbreaking technologies.
Collaborations
Maneesh has worked closely with his coworker, Mihir Bohra, on various projects related to memory technology. Their collaboration has fostered an environment of innovation and creativity, leading to significant advancements in their field.
Conclusion
Maneesh Mishra's contributions to phase change memory structures exemplify the spirit of innovation in technology. His work at Intel Corporation and his patent highlight his role as a key inventor in the field. The advancements he has made are poised to influence the future of memory technology significantly.