The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Jul. 01, 2017
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Maneesh Mishra, Boise, ID (US);
Mihir H. Bohra, Boise, ID (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 27/2409 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/1608 (2013.01);
Abstract
A phase change memory structure () can include a memory cell, a dielectric material () adjacent to the memory cell, and a bit line. The memory cell can include a phase change material layer () and a top electrode layer () above the phase change material layer. The dielectric material can have a top surface () that is higher than a top surface () of the top electrode layer. The bit line () can have a non-flat bottom surface that contacts the top surface of the dielectric material and protrudes down from the top surface of the dielectric material to a top surface of the memory cell.