Intel Corporation

Maneesh Mishra

Mihir Bohra

A phase change memory structure () can include a memory cell, a dielectric material () adjacent to the memory cell, and a bit line. The memory cell can include a phase change material layer () and a top electrode layer () above the phase change material layer. The dielectric material can have a top surface () that is higher than a top surface () of the top electrode layer. The bit line () can have a non-flat bottom surface that contacts the top surface of the dielectric material and protrudes down from the top surface of the dielectric material to a top surface of the memory cell.

Growing community of inventors

Boise, ID, United States of America

Maneesh Mishra