This inventor holds 6 USPTO granted patents. Top assignees: Macronix International Co., Ltd., Other. Active years: 2001-2003.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
5 out of 3,609 
1 out of 834,570 Years Active: 2001-2003
Title: Mam Tsung Wang: Innovator in Multilevel Memory Cell Technology
Introduction
Mam Tsung Wang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor memory technology, holding a total of 6 patents. His work focuses on innovative methods for enhancing memory cell performance and reliability.
Latest Patents
Wang's latest patents include a process and integrated circuit for a multilevel memory cell with an asymmetric drain. This invention provides an inhibited source read current, which dramatically reduces the likelihood of cell type misread errors in memory arrays comprising multilevel cells. The fabrication method involves a source-only implant and the formation of a spacer on the drain side of the gate prior to the source/drain implant. The resultant offset region is not controlled by the gate voltage, leading to improved drain current performance.
Another notable patent is the 8-bit per cell non-volatile semiconductor memory structure utilizing trench technology and a dielectric floating gate. This device is designed to store up to eight bits of information and features a unique semiconductor substrate configuration. The innovative design includes a trapping dielectric layer and a wordline formed over it, enhancing the device's functionality and efficiency.
Career Highlights
Mam Tsung Wang has worked with notable companies in the semiconductor industry, including Macronix International Co., Ltd. His experience in these organizations has contributed to his expertise in memory technology and innovation.
Collaborations
Wang has collaborated with esteemed colleagues such as Tao Cheng Lu and Ful Long Ni. Their joint efforts have further advanced the development of cutting-edge memory technologies.
Conclusion
Mam Tsung Wang is a key figure in the advancement of multilevel memory cell technology. His innovative patents and collaborations have significantly impacted the semiconductor industry, showcasing his dedication to enhancing memory performance and reliability.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile