The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Jul. 22, 1999
Tao Cheng Lu, Kaohsiung, TW;
Wen Jer Tsai, Hsinchu, TW;
Mam Tsung Wang, Hsinchu, TW;
Chin Hsi Lin, Hsinchu, TW;
Ful Long Ni, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method for programming a semiconductor memory device, such as an EPROM or a Flash EPROM, which combines the advantages of ramping down a source voltage with the advantages associated with increasing a gate voltage. A programming period is divided into a program disturbance inhibited period and a program period. The programming period is further divided into sub-program periods, with each sub-program period having a program disturbance and a program period. A wordline WL voltage may increase with each sub-program period to improve the programming speed. Also, the program disturbance period may only be performed for the first sub-program period. Each sub-program period may also include a verify period, in order to implement a program and verify technique suitable for programming multi-level Flash EPROMS.