Hsinchu, Taiwan

Ful Long Ni

This inventor holds 4 USPTO granted patents. Top assignee: Macronix International Co., Ltd.. Active years: 2001-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ful Long Ni. Retrieved from https://idiyas.com/inventor/ful-long-ni-nvgrzif2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 41(Granted Patents)


Company Filing History:


Years Active: 2001-2006

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4 patents (USPTO):Explore Patents

Title: Ful Long Ni: Innovator in Memory Cell Technology

Introduction

Ful Long Ni is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory cell technology, holding a total of 4 patents. His work focuses on enhancing the performance and efficiency of memory arrays, which are crucial in modern electronic devices.

Latest Patents

One of his latest patents is titled "Decoder arrangement of a memory cell array." This invention proposes a hybrid memory cell array that includes a preferable arrangement of a row decoder. It aims to achieve high access speed and high integration layout of a memory chip. The hybrid memory cell consists of multiple memory cells, each equipped with an electronic circuit to store binary logic values. The design incorporates a row decoder to enable word lines and select memory cells, along with a column decoder to manage bit lines.

Another notable patent is "Process and integrated circuit for a multilevel memory cell with an asymmetric drain." This invention introduces an asymmetric multilevel memory cell that inhibits source read current, significantly reducing the likelihood of misread errors in memory arrays. The fabrication method involves a source-only implant and the formation of a spacer on the drain side of the gate, resulting in an offset region that is not controlled by gate voltage. This innovative design allows for accurate reading of memory cells in a memory array.

Career Highlights

Ful Long Ni is currently employed at Macronix International Co., Ltd., a leading company in the semiconductor industry. His work at Macronix has positioned him as a key player in the development of advanced memory technologies. His contributions have not only advanced the company's product offerings but have also influenced the broader field of memory technology.

Collaborations

Throughout his career, Ful Long Ni has collaborated with notable colleagues, including Tao Cheng Lu and Mam Tsung Wang. These collaborations have fostered innovation and have led to the successful development of various memory technologies.

Conclusion

Ful Long Ni's contributions to memory cell technology have made a significant impact on the industry. His innovative patents and work at Macronix International Co., Ltd. highlight his role as a leading inventor in this field. His advancements continue to shape the future of memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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