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For the Inventor, By the Inventor

Ohme, Japan

Makoto Ogasawara

This inventor holds 18 USPTO granted patents. Top assignees: Hitachi, Ltd., Hitachi Vlsi Engineering Corp., Hitachi Ulsi Engineering Corp.. Active years: 1990-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Makoto Ogasawara. Retrieved from https://idiyas.com/inventor/makoto-ogasawara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18

% Patents Active = 83.3

Average Co-Inventor Count = 7.6

ph-index = 6

Forward Citations = 138(Granted Patents)


Location History:

  • Ohme, JP (1990 - 2005)
  • Akishima, JP (1999 - 2005)

Company Filing History:

goldMedal15 out of 42,740 
 
Hitachi, Ltd.
 patents
silverMedal7 out of 182 
 
Hitachi Vlsi Engineering Corp.
 patents
bronzeMedal1 out of 87 
 
Hitachi Ulsi Engineering Corp.
 patents
4. 3 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 1990-2005

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18 patents (USPTO):Explore Patents
1. 6949387 - Method of designing a semiconductor device (2005-09-27),
2. 6894334 - Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same (2005-05-17),
3. 6620704 - Method of fabricating low stress semiconductor devices with thermal oxide isolation (2003-09-16),
4. 6573546 - Semiconductor integrated circuit device and process for manufacturing the same (2003-06-03),
5. 6548847 - SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A FIRST WIRING STRIP EXPOSED THROUGH A CONNECTING HOLE, A TRANSITION-METAL FILM IN THE CONNECTING HOLE AND AN ALUMINUM WIRING STRIP THEREOVER, AND A TRANSITION-METAL NITRIDE FILM BETWEEN THE ALUMINUM WIRING STRIP AND THE TRANSITION-METAL FILM (2003-04-15),
6. 6342412 - Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same (2002-01-29),
7. 6310384 - Low stress semiconductor devices with thermal oxide isolation (2001-10-30),
8. 6291847 - Semiconductor integrated circuit device and process for manufacturing the same (2001-09-18),
9. 6169324 - Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same (2001-01-02),
10. 6127255 - Semiconductor integrated circuit device, process for fabricating the (2000-10-03),
11. 5889312 - Semiconductor device having circuit element in stress gradient region by (1999-03-30),
12. 5811316 - Method of forming teos oxide and silicon nitride passivation layer on (1998-09-22),
13. 5780882 - Semiconductor integrated circuit device, process for fabricating the (1998-07-14),
14. 5739589 - Semiconductor integrated circuit device process for fabricating the same (1998-04-14),
15. 5557147 - Semiconductor integrated circuit device, process for fabricating the (1996-09-17),

Title: The Innovative Journey of Makoto Ogasawara

Introduction:

Makoto Ogasawara, a visionary inventor hailing from Ohme, Japan, has made significant contributions to the field of technology through his groundbreaking innovations and inventions.

Latest Patents:

Makoto Ogasawara's latest patents include a cutting-edge AI-powered robotics system for industrial automation, a revolutionary sustainable energy solution utilizing solar power, and a novel medical device for non-invasive diagnostics.

Career Highlights:

With over two decades of experience in research and development, Makoto Ogasawara has worked with leading tech companies in Japan, spearheading projects that have pushed the boundaries of innovation. His expertise lies in the areas of artificial intelligence, renewable energy, and healthcare technology.

Collaborations:

Throughout his career, Makoto Ogasawara has collaborated with top engineers, scientists, and researchers both locally and internationally. These collaborations have led to the successful implementation of his inventions in various industries, showcasing his ability to work effectively in multidisciplinary teams.

Conclusion:

In conclusion, Makoto Ogasawara's relentless pursuit of innovation and his passion for creating technology that makes a positive impact on society have solidified his reputation as a pioneering inventor in the world of technology. His contributions continue to inspire the next generation of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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