The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2001
Filed:
Sep. 24, 1998
Applicant:
Inventors:
Kiyonori Ohyu, Ohme, JP;
Makoto Ohkura, Fuchu, JP;
Aritoshi Sugimoto, Tokyo, JP;
Yoshitaka Tadaki, Hannou, JP;
Makoto Ogasawara, Akishima, JP;
Masashi Horiguchi, Kanagawa, JP;
Norio Hasegawa, Hinode-machi, JP;
Shinichi Fukada, Hino, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1119 ;
Abstract
A field oxide film,in a region where relief cells are formed is made wider than the field oxide film,in a region where normal memory cells are formed thereby to make a field relaxation layer,of the relief cells deeper than the field relaxation layer,of the normal cells, and the depletion layer of the sources and drains (n-type semiconductor regions) of the relief cells is widened to weaken the junction field.