Makoto Muto

Title: The Innovative Contributions of Makoto Muto

Introduction

Makoto Muto is a notable inventor based in Ayase, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for etching metal films and preparing thin film resistors. With a total of 2 patents to his name, Muto's work has had a considerable impact on the industry.

Latest Patents

Muto's latest patents include a metal film etching method and a method of preparing thin film resistors. The metal film etching method selectively etches a metal film formed on a layer insulating film with viaholes. This method ensures that the metal film covering the viaholes is preserved while the rest is completely removed without creating pits. It utilizes a mixed reactive gas containing fluorine atoms, chlorine atoms, and oxygen gas. The method of preparing thin film resistors involves several steps, including forming a thin film of a metal compound on an oxide film, masking the desired area with an organic material, and patterning the thin film using plasma conversion. This innovative approach is particularly useful in conjunction with semiconductor devices.

Career Highlights

Throughout his career, Muto has worked with prominent companies such as Nippondenso Co., Ltd. and Toshiba Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the semiconductor field.

Collaborations

Muto has collaborated with notable colleagues, including Mikimasa Suzuki and Makio Iida. These partnerships have fostered an environment of innovation and creativity, leading to advancements in their respective fields.

Conclusion

Makoto Muto's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor. His innovative methods continue to influence the industry and pave the way for future advancements.