Kabushiki Kaisha Toshiba

Nippondenso Co., Ltd.

Shibaura Engineering Works Co., Ltd.

Makoto Muto

Akira Kobayashi

Makio Iida

Mikimasa Suzuki

Kei Hattori

Tomoaki Yoshimori

Masaru Kasai

Mikio Nonaka

Toshiyasu Onoda

A metal film etching method etches selectively a metal film formed on a layer insulating film provided with viaholes so as to cover the surface of the layer insulating film and fill up the viaholes so that the metal film excluding portions there of filling up the viaholes are removed completely without forming a pit in the portions of the metal film filling up the viaholes. The metal film etching method uses a mixed reactive gas of a gas containing fluorine atoms, a gas containing chlorine atoms and oxygen gas.

Metal film etching method

A method of preparing a patterned thin film resistor that is appropriately used in combination with semiconductor devices. The method comprises a thin film forming step comprising forming a thin film of a compound comprising at least one metal on an oxide film such as a silicon oxide film; a masking step comprising covering a desired area of the thin film by an organic material; a patterning step comprising converting to plasma a gas mixture comprising a fluorine compound gas and oxygen, and removing an area of the thin film, that is not covered by the organic material by exposing it to a gas containing activated fluorine by the plasma conversion; and a removing step comprising removing the organic material remaining on the desired area of the thin film.

Method of preparing thin film resistors

Growing community of inventors

Ayase, Japan

Makoto Muto