The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 1996

Filed:

Aug. 18, 1994
Applicant:
Inventors:

Mikimasa Suzuki, Toyohashi, JP;

Makio Iida, Ichinomiya, JP;

Makoto Muto, Ayase, JP;

Assignee:

Nippondenso Co., Ltd., Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H / ;
U.S. Cl.
CPC ...
427539 ; 427259 ; 427537 ; 437 47 ; 437 60 ; 437918 ; 216 67 ; 216 48 ; 216 79 ;
Abstract

A method of preparing a patterned thin film resistor that is appropriately used in combination with semiconductor devices. The method comprises a thin film forming step comprising forming a thin film of a compound comprising at least one metal on an oxide film such as a silicon oxide film; a masking step comprising covering a desired area of the thin film by an organic material; a patterning step comprising converting to plasma a gas mixture comprising a fluorine compound gas and oxygen, and removing an area of the thin film, that is not covered by the organic material by exposing it to a gas containing activated fluorine by the plasma conversion; and a removing step comprising removing the organic material remaining on the desired area of the thin film.


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