Makoto Hatori

Title: The Innovations of Makoto Hatori

Introduction

Makoto Hatori is a prominent inventor based in Fussa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on improving the performance and efficiency of semiconductor devices.

Latest Patents

One of Hatori's latest patents involves a semiconductor device that enhances performance through a unique silicide process. This invention features a metal silicide film formed on a gate electrode and an n-type source region of an LDMOSFET, while ensuring that no such film is present on the n-type offset drain region. Additionally, a side wall spacer made of silicon is created via an insulating film on the gate electrode's side wall, leading to the formation of a field plate electrode that does not extend above the gate electrode. Another notable patent addresses the reduction of size and improvement of power added efficiency in RF power modules. This is achieved by optimizing the structure of the offset drain region in a silicon power MOSFET, allowing for simultaneous reductions in on resistance and feedback capacitance.

Career Highlights

Hatori has worked with notable companies in the semiconductor industry, including Renesas Electronics Corporation and Renesas Technology Corporation. His experience in these organizations has contributed to his expertise in semiconductor device innovation.

Collaborations

Throughout his career, Hatori has collaborated with esteemed colleagues such as Yutaka Hoshino and Tomoyuki Miyake. These partnerships have further enriched his work and advancements in semiconductor technology.

Conclusion

Makoto Hatori's contributions to semiconductor technology through his innovative patents and collaborations highlight his significant role in the field. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in technology.