The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Sep. 12, 2005
Makoto Hatori, Fussa, JP;
Yutaka Hoshino, Akishiama, JP;
Makoto Hatori, Fussa, JP;
Yutaka Hoshino, Akishiama, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The invention improves the performance of a semiconductor device. A metal silicide film is formed by a silicide process on a gate electrode and an n-type source region of an LDMOSFET, and no such metal silicide film is formed on an n-type offset drain region, an n-type offset drain region, and an n-type drain region. A side wall spacer comprising a silicon film is formed via an insulating film on the side wall of the gate electrode over the drain side thereof, and a field plate electrode is formed by this side wall spacer. The field plate electrode does not extend above the gate electrode, and a metal silicide film is formed over the entire upper surface of the gate electrode in the silicide process.