The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Dec. 27, 2006
Tomoyuki Miyake, Higashimurayama, JP;
Masatoshi Morikawa, Hanno, JP;
Yutaka Hoshino, Akishima, JP;
Makoto Hatori, Fussa, JP;
Tomoyuki Miyake, Higashimurayama, JP;
Masatoshi Morikawa, Hanno, JP;
Yutaka Hoshino, Akishima, JP;
Makoto Hatori, Fussa, JP;
Renesas Electronics Corp., Tokyo, JP;
Abstract
To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an offset drain region existing between a gate electrode and an ntype drain region of the power MOSFET into a double offset one. More specifically, this is accomplished by adjusting the impurity concentration of an ntype offset drain region, which is closest to the gate electrode, to be relatively low and adjusting the impurity concentration of an n type offset drain region, which is distant from the gate electrode, to be relatively high.