Loubna Hannati

Title: Loubna Hannati: Innovator in Design-for-Test Technologies

Introduction

Loubna Hannati is a prominent inventor based in Roquefort les Pins, France. She has made significant contributions to the field of design-for-test (DFT) technologies, holding 2 patents that showcase her innovative spirit and technical expertise.

Latest Patents

Her latest patents focus on design-for-test apparatuses and techniques. These embodiments of DFT apparatuses include a static random access memory (SRAM) cell and read/write (R/W) circuitry. The R/W circuitry provides a nominal word line (WL) voltage and a nominal bit line (BL) voltage for application to the SRAM cell during accesses. The DFT apparatus also features test circuitry that can be in either an activated or deactivated state. When activated, the WL voltage and/or the BL voltage applied to the SRAM cell may differ from the nominal voltages provided by the R/W/decoder circuitry. This innovative approach allows for effective testing while maintaining the integrity of the SRAM cell.

Career Highlights

Loubna is currently employed at Intel Corporation, where she continues to push the boundaries of technology. Her work in DFT technologies has positioned her as a key player in the advancement of testing methodologies in semiconductor design.

Collaborations

Throughout her career, Loubna has collaborated with talented individuals such as Vianney Antoine Choserot and Nabil Badereddine. These collaborations have further enriched her work and contributed to the success of her projects.

Conclusion

Loubna Hannati is a trailblazer in the field of design-for-test technologies, with a strong portfolio of patents and a commitment to innovation. Her contributions to Intel Corporation and the broader tech community highlight her importance as an inventor.