Xiamen, China

Liangjun Wang

This inventor holds 4 USPTO granted patents and 2 published patent applications. Top assignees: Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen San'an Optoelectronics Co., Ltd. Active years: 2016-2019.

USPTO Granted Patents = 4 

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Location History:

  • Tianjin, CN (2016)
  • Xiamen, CN (2016 - 2019)

Company Filing History:


Years Active: 2016-2019

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4 patents (USPTO):Explore Patents

Title: Innovations of Liangjun Wang in Light Emitting Diodes

Introduction

Liangjun Wang is a prominent inventor based in Xiamen, China. He has made significant contributions to the field of optoelectronics, particularly in the development of light-emitting diodes (LEDs). With a total of 4 patents to his name, his work has advanced the technology and performance of LED devices.

Latest Patents

One of his latest patents is titled "Light Emitting Diode and Fabrication Method Thereof." This invention describes a light-emitting diode that includes a first-type nitride region, a light-emitting region, and a second-type nitride region. The first-type nitride region consists of alternating first and second nitride layers, with the second nitride layers having high-doped emitting points directed towards the corresponding first nitride layer. The second-type nitride region also features alternating third and fourth nitride layers, where the doping concentration of the fourth nitride layer is higher than that of the third. By adjusting the thickness of these layers during growth cycles, the horizontal expansion of current can be significantly enhanced, thereby improving LED performance.

Another notable patent is for a "Nitride Light-Emitting Diode." This invention includes a substrate, an n-type nitride layer, a light-emitting layer, a p-type nitride layer, a p+ layer, an AlInN layer, an n+ layer, and an ITO transparent electrode. The design incorporates a tunneling structure with an AlInN intermediate layer, which generates polarization charges at the tunneling junction interface. This innovation increases the tunneling probability of holes and reduces contact resistances, further enhancing the efficiency of the LED.

Career Highlights

Liangjun Wang has worked with notable companies in the optoelectronics sector, including Xiamen Sanan Optoelectronics Technology Co., Ltd. and Xiamen San'an Optoelectronics Co., Ltd. His experience in these organizations has allowed him to collaborate on various projects that push the boundaries of LED technology.

Collaborations

Throughout his career, Liangjun has collaborated with talented individuals such as Xiaofeng Liu and Duxiang Wang. These partnerships have contributed to the successful development of innovative technologies in the field.

Conclusion

Liangjun Wang's contributions to the

Profile summary based on public USPTO records.
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