The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Jan. 12, 2018
Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;
Liming Shu, Xiamen, CN;
Da-qian Ye, Xiamen, CN;
Liangjun Wang, Xiamen, CN;
Xiaofeng Liu, Xiamen, CN;
Chaoyu Wu, Xiamen, CN;
Duxiang Wang, Xiamen, CN;
Dongyan Zhang, Xiamen, CN;
Sha-sha Chen, Xiamen, CN;
XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen, CN;
Abstract
A light-emitting diode includes a first-type nitride region, a light-emitting region and a second-type nitride region, wherein the first-type nitride region includes a plurality of alternating first nitride layers and second nitride layers. The second nitride layers have high-doped emitting points pointing to the corresponding first nitride layer. The second-type nitride region includes a plurality of alternating third nitride layers and fourth nitride layers, wherein doping concentration of the fourth nitride layer is higher than that of the third nitride layer, and the fourth nitride layer has high-doped emitting points pointing to the third nitride layer. By adjusting thickness of the second nitride layer and the fourth nitride layer in different growth cycles, and density and form of corresponding emitting points, horizontal expansion of current in the first-type nitride region and the second-type nitride region can be greatly enhanced through alternating emitting points, thereby improving LED performance.