The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
May. 03, 2016
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Dongyan Zhang, Xiamen, CN;
Duxiang Wang, Xiamen, CN;
Xiaofeng Liu, Xiamen, CN;
Shasha Chen, Xiamen, CN;
Liangjun Wang, Xiamen, CN;
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;
Abstract
A nitride light-emitting diode includes a substrate, an n-type nitride layer, a light-emitting layer, a p-type nitride layer, a p+ layer, an AlInN layer, an n+ layer, and an ITO transparent electrode. A tunneling structure with an AlInN intermediate layer is adopted as the contact layer, which generates polarization charges at the tunneling junction interface and maintains effective width of the depletion region, thereby increasing tunneling probability of holes and reducing contact resistances.