The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Jan. 04, 2014
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Minghui Song, Xiamen, CN;
Guijiang Lin, Xiamen, CN;
Zhihao Wu, Xiamen, CN;
Liangjun Wang, Xiamen, CN;
Jianqing Liu, Xiamen, CN;
Jingfeng Bi, Xiamen, CN;
Weiping Xiong, Xiamen, CN;
Zhidong Lin, Xiamen, CN;
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;
Abstract
A fabrication method for an inverted solar cell includes: (1) providing a growth substrate; (2) depositing a SiOmask layer over the surface of the growth substrate to form a patterned substrate; (3) forming a sacrificial layer with epitaxial growth over the patterned substrate, wherein the sacrificial layer encompasses the entire SiOmask pattern; (4) forming a buffer layer over the sacrificial layer via epitaxial growth; (5) forming a semiconductor material layer sequence of the inverted solar cell over the buffer layer with epitaxial growth; (6) bonding the semiconductor material layer sequence of the inverted solar cell with a supporting substrate; (7) selectively etching the SiOmask layer by wet etching; and (8) selectively etching the sacrificial layer by wet etching to lift off the growth substrate.