Taipei, Taiwan

Liang-Kai Han

This inventor holds 7 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2007-2016.


% Patents Active = 71.4

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 87(Granted Patents)


Location History:

  • Hsinchu, TW (2008 - 2009)
  • Taipei, TW (2007 - 2016)

Company Filing History:


Years Active: 2007-2016

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7 patents (USPTO):Explore Patents

Title: Innovations of Liang-Kai Han

Introduction

Liang-Kai Han is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents is the "Low TCR High Resistance Resistor." This patent involves a method that includes providing a substrate with a top surface and forming a gate over it. The gate is etched to reduce its height, which is crucial for the performance of semiconductor devices. Another notable patent is for "Power Devices Having Reduced On-Resistance and Methods of Their Manufacture." This patent describes a method for forming a support structure for semiconductor wafers containing vertical FETs, ensuring efficient handling and packaging of the dies.

Career Highlights

Liang-Kai Han is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has contributed to advancements in semiconductor technology, making devices more efficient and reliable.

Collaborations

Liang-Kai Han has collaborated with notable colleagues, including I-Lu Wu and Kuang-Hsin Chen. Their teamwork has fostered a productive environment for innovation and development in their field.

Conclusion

Liang-Kai Han's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
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