The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Jan. 13, 2011
Jing-hwang Yang, Zhubei, TW;
Chun-heng Liao, Xindian, TW;
Hsin-li Cheng, Hsin Chu, TW;
Liang-kai Han, Taipei, TW;
Jing-Hwang Yang, Zhubei, TW;
Chun-Heng Liao, Xindian, TW;
Hsin-Li Cheng, Hsin Chu, TW;
Liang-Kai Han, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure involves a method. The method includes providing a substrate including a top surface. The method also includes forming a gate over the top surface of the substrate. The formed gate has a first height measured from the top surface of the substrate. The method also includes etching the gate to reduce the gate to a second height. This second height is substantially less than the first height. The present disclosure also involves a semiconductor device. The semiconductor device includes a substrate. The substrate includes a top surface. The semiconductor device also includes a first gate formed over the top surface of the substrate. The first gate has a first height. The semiconductor device also includes a second gate formed over the top surface of the substrate. The second gate has a second height. The first height is substantially less than the second height.