Hsinchu, Taiwan

Li-Yeat Chen

This inventor holds 2 USPTO granted patents. Top assignee: Vanguard International Semiconductor Corporation. Active years: 1998-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Li-Yeat Chen. Retrieved from https://idiyas.com/inventor/li-yeat-chen-yfdssj5f

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 1998-2000

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2 patents (USPTO):Explore Patents

Title: Innovations by Li-Yeat Chen

Introduction

Li-Yeat Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches.

Latest Patents

His latest patents include a method of forming a shallow trench isolation using PE-oxide and a method for forming a capacitor using a silicon oxynitride etching stop. The first patent describes a process where a thin silicon dioxide layer is formed on a substrate to act as a pad layer. A silicon nitride layer is then deposited on this pad layer, followed by the formation of trenches in the substrate. These trenches consist of first trenches and a second trench with a wider opening. A CVD-oxide layer is formed on the silicon nitride layer and refilled into the trenches. The process concludes with the formation of a multi-layer that includes alternating PE-nitride layers and PE-oxide layers, which are polished to the surface of the silicon nitride layer using chemical mechanical polishing (CMP) technology. The second patent outlines a process where a polysilicon layer is deposited on a dielectric layer, followed by the formation of a silicon oxynitride layer. A photoresist pattern is imprinted on the silicon oxynitride layer to define the storage node, which is then etched to form the storage node. The process includes depositing HSG silicon and performing isotropic etching to refine the storage node.

Career Highlights

Li-Yeat Chen is currently employed at Vanguard International Semiconductor Corporation, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing technologies that are critical to modern electronics.

Collaborations

Some of his coworkers include Jin-Dong Chen and Wei-Ray Lin, who contribute to the collaborative environment that fosters innovation at Vanguard International Semiconductor Corporation.

Conclusion

Li-Yeat Chen's contributions to semiconductor technology through his patents and work at Vanguard International Semiconductor Corporation highlight his role as a key innovator in the field. His innovative methods continue to influence the development of advanced electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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