The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1998
Filed:
Oct. 31, 1997
Li-Yeat Chen, Hsinchu, TW;
Jin-Dong Chen, Hsinchu, TW;
Erik S Jeng, Hsinchu, TW;
Ing-Ruey Liaw, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A polysilicon layer is deposited on a dielectric layer. A silicon oxynitride layer is then formed on the polysilicon layer. A photoresist is imprinted with a pattern on the silicon oxynitride layer to define the storage node. An etching step is used to etch the silicon oxynitride layer and the polysilicon layer to formed the storage node. A HSG silicon is deposited on the silicon oxynitride layer and on the side walls of the storage node. An isotropically etching step is performed to remove the HSG layer on the top of the storage node. The silicon oxynitride is then removed. A dielectric layer is then formed along the surface of the storage node. A conductive layer is deposited over the dielectric layer. The conductive layer is used as the top storage node.