The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2000
Filed:
Apr. 07, 1998
Wei-Ray Lin, Yi Lan, TW;
Li-Yeat Chen, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A thin silicon dioxide layer is formed on the substrate to act as a pad layer. Subsequently, a silicon nitride layer is deposited on the pad layer. Trenches are formed in the substrate. The trenches include first trenches and a second trench that has a relatively wide opening compared to the first trenches. An CVD-oxide layer is formed on the silicon nitride layer and refilled into the trenches. A multi-layer is then formed on the CVD-oxide layer. The multi-layer includes alternating PE-nitride layers and PE-oxide layers. Subsequently, a chemical mechanical polishing (CMP) technology is used for removing the multi-layer layer to the surface of the silicon nitride layer.