Vanguard International Semiconductor Corporation

Li-Yeat Chen

Erik S Jeng

Ing-Ruey Liaw

Wei-Ray Lin

Jin-Dong Chen

A thin silicon dioxide layer is formed on the substrate to act as a pad layer. Subsequently, a silicon nitride layer is deposited on the pad layer. Trenches are formed in the substrate. The trenches include first trenches and a second trench that has a relatively wide opening compared to the first trenches. An CVD-oxide layer is formed on the silicon nitride layer and refilled into the trenches. A multi-layer is then formed on the CVD-oxide layer. The multi-layer includes alternating PE-nitride layers and PE-oxide layers. Subsequently, a chemical mechanical polishing (CMP) technology is used for removing the multi-layer layer to the surface of the silicon nitride layer.

Method of forming a shallow trench isolation by using PE-oxide and

A polysilicon layer is deposited on a dielectric layer. A silicon oxynitride layer is then formed on the polysilicon layer. A photoresist is imprinted with a pattern on the silicon oxynitride layer to define the storage node. An etching step is used to etch the silicon oxynitride layer and the polysilicon layer to formed the storage node. A HSG silicon is deposited on the silicon oxynitride layer and on the side walls of the storage node. An isotropically etching step is performed to remove the HSG layer on the top of the storage node. The silicon oxynitride is then removed. A dielectric layer is then formed along the surface of the storage node. A conductive layer is deposited over the dielectric layer. The conductive layer is used as the top storage node.

Growing community of inventors

Hsinchu, Taiwan

Li-Yeat Chen