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For the Inventor, By the Inventor

South Salem, NY, United States of America

Lewis M Terman

USPTO Granted Patents = 15

Average Co-Inventor Count = 2.5

ph-index = 13

Forward Citations = 312(Granted Patents)


Company Filing History:

goldMedal15 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 1977-1994

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15 patents (USPTO):
1. 5339274 - Variable bitline precharge voltage sensing technique for DRAM structures (1994-08-16),
2. 5336629 - Folder Bitline DRAM having access transistors stacked above trench (1994-08-09),
3. 5280452 - Power saving semsing circuits for dynamic random access memory (1994-01-18),
4. 5214603 - Folded bitline, ultra-high density dynamic random access memory having (1993-05-25),
5. 5148059 - CMOS and ECL logic circuit requiring no interface circuitry (1992-09-15),
6. 4763180 - Method and structure for a high density VMOS dynamic ram array (1988-08-09),
7. 4688063 - Dynamic ram cell with MOS trench capacitor in CMOS (1987-08-18),
8. 4638462 - Self-timed precharge circuit (1987-01-20),
9. 4618784 - High-performance, high-density CMOS decoder/driver circuit (1986-10-21),
10. 4326192 - Sequential successive approximation analog-to-digital converter (1982-04-20),
11. 4306300 - Multi-level charge-coupled device memory system including (1981-12-15),
12. 4137464 - Charge-transfer binary search generating circuit (1979-01-30),
13. 4087812 - Digital-to-analog and analog-to-digital converter circuit (1978-05-02),
14. 4072939 - Analog-to-digital and digital-to-analog converter circuits employing (1978-02-07),
15. 4028558 - High accuracy MOS comparator (1977-06-07),

Title: Innovations of Lewis M Terman

Introduction

Lewis M Terman is a notable inventor based in South Salem, NY (US). He has made significant contributions to the field of technology, particularly in the area of dynamic random-access memory (DRAM) structures. With a total of 15 patents to his name, Terman's work has had a lasting impact on the industry.

Latest Patents

Among his latest patents is the "Variable bitline precharge voltage sensing technique for DRAM structures." This innovative sensing technique utilizes a variable precharge voltage with a single bitline swing in a DRAM cell or array. The approach effectively reduces power dissipation by varying the bitline precharge voltage from one RAS cycle to the next, depending on the data level in the accessed cells. This arrangement eliminates the need for a reference voltage generator, as the precharge voltage is not uniform across RAS cycles. Another significant patent is the "Folder Bitline DRAM having access transistors stacked above trench." This patent describes a folded bitline DRAM cell that includes a trench capacitor and a planar-configured access transistor. The access transistor is strategically stacked over the capacitor, optimizing electrical connections and enhancing performance.

Career Highlights

Lewis M Terman is currently associated with International Business Machines Corporation (IBM), where he continues to innovate and contribute to advancements in technology. His work has been instrumental in developing more efficient memory structures that are crucial for modern computing.

Collaborations

Terman has collaborated with notable colleagues such as Sang Hoo Dhong and Wei Hwang. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Lewis M Terman's contributions to the field of technology, particularly in DRAM structures, highlight his role as a leading inventor. His patents reflect a commitment to innovation and efficiency in memory technology.

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