Laun C Tran

Title: Laun C Tran: Innovator in Memory Technology

Introduction

Laun C Tran is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of memory technology, particularly in the development of algorithms for memory devices. With a total of 2 patents to his name, Tran's work is recognized for its innovative approach to error correction in memory systems.

Latest Patents

Tran's latest patents include advancements in MRAM (Magnetoresistive Random Access Memory) technology. One of his patents focuses on a smart bit write algorithm that incorporates error correction parity bits. This system includes write circuitry, read circuitry, and comparison circuitry. The write circuitry is designed to write an expected multi-bit word to a memory location, while the read circuitry retrieves the actual multi-bit word from that location. The comparison circuitry then distinguishes between erroneous bits and correct bits in the actual multi-bit word. Notably, the write circuitry can re-write only the erroneous bits without affecting the correct bits, enhancing the efficiency of memory operations.

Another patent by Tran also addresses the MRAM smart bit write algorithm with error correction parity bits. This method attempts to write an expected multi-bit word to a memory location and subsequently reads the actual multi-bit word. By comparing the two, the method identifies erroneous and correct bits, allowing for the re-writing of only the erroneous bits, which streamlines the memory writing process.

Career Highlights

Laun C Tran is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this prestigious company has allowed him to collaborate with other talented professionals in the field.

Collaborations

Tran has worked alongside esteemed colleagues such as Yue-Der Chih and Hung-Chang Yu. Their collaborative efforts have contributed to the advancement of memory technology and the development of innovative solutions in the industry.

Conclusion

Laun C Tran's contributions to memory technology through his patents and work at Taiwan Semiconductor Manufacturing Company Limited highlight his role as an influential inventor. His innovative algorithms for error correction in memory devices are paving the way for more efficient memory systems in the future.