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For the Inventor, By the Inventor

Seoul, South Korea

Kyu-Tae Na

USPTO Granted Patents = 14

Average Co-Inventor Count = 3.7

ph-index = 4

Forward Citations = 40(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2009)
  • Seoul, KR (2006 - 2013)

Company Filing History:

goldMedal14 out of 131,766 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2006-2013

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14 patents (USPTO):Explore Patents
1. 8563429 - Methods of forming a metal silicide layer for semiconductor devices (2013-10-22),
2. 8237240 - Isolation layer structure, method of forming the same and method of manufacturing a semiconductor device including the same (2012-08-07),
3. 8017495 - Method of forming isolation layer structure and method of manufacturing a semiconductor device including the same (2011-09-13),
4. 7745305 - Method of removing an oxide and method of filling a trench using the same (2010-06-29),
5. 7601588 - Method of forming a trench isolation layer and method of manufacturing a non-volatile memory device using the same (2009-10-13),
6. 7598177 - Methods of filling trenches using high-density plasma deposition (HDP) (2009-10-06),
7. 7585786 - Methods of forming spin-on-glass insulating layers in semiconductor devices and associated semiconductor device (2009-09-08),
8. 7560383 - Method of forming a thin layer and method of manufacturing a non-volatile semiconductor device using the same (2009-07-14),
9. 7534698 - Methods of forming semiconductor devices having multilayer isolation structures (2009-05-19),
10. 7517817 - Method for forming a silicon oxide layer using spin-on glass (2009-04-14),
11. 7358190 - Methods of filling gaps by deposition on materials having different deposition rates (2008-04-15),
12. 7332409 - Methods of forming trench isolation layers using high density plasma chemical vapor deposition (2008-02-19),
13. 7192891 - Method for forming a silicon oxide layer using spin-on glass (2007-03-20),
14. 7056827 - Methods of filling trenches using high-density plasma deposition (HDP) (2006-06-06),
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