The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2009

Filed:

Apr. 05, 2006
Applicants:

Kyong-hee Joo, Gyeonggi-do, KR;

Yong-won Cha, Gyeonggi-do, KR;

Seung-hyun Lim, Seoul, KR;

In-seok Yeo, Seoul, KR;

Kyu-tae NA, Seoul, KR;

Inventors:

Kyong-Hee Joo, Gyeonggi-do, KR;

Yong-Won Cha, Gyeonggi-do, KR;

Seung-Hyun Lim, Seoul, KR;

In-Seok Yeo, Seoul, KR;

Kyu-Tae Na, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a method of forming a thin layer having a desired composition, a source gas is provided onto a substrate loaded in a chamber for a first time, and the source gas is chemisorbed onto the substrate. While the source gas is provided, a plasma is generated in the chamber for a second time to change the chemisorbed source gas into the thin layer having the desired composition. The thin layer may have a stoichiometrical composition or a non-stoichiometrical composition.


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