The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Jun. 09, 2005
Applicants:
Yong-won Cha, Gyeonggi, KR;
Kyu-tae NA, Seoul, KR;
Yong-soon Choi, Seoul, KR;
Eunkee Hong, Gyeonggi-do, KR;
Ju-seon Goo, Gyeonggi-Do, KR;
Inventors:
Yong-Won Cha, Gyeonggi, KR;
Kyu-Tae Na, Seoul, KR;
Yong-Soon Choi, Seoul, KR;
Eunkee Hong, Gyeonggi-do, KR;
Ju-Seon Goo, Gyeonggi-Do, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.