The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Nov. 12, 2010
Ju-wan Kim, Seongnam-si, KR;
Kyu-tae NA, Seoul, KR;
Min Kim, Seoul, KR;
Seung-bae Park, Yongin-si, KR;
Il-woo Kim, Hwaseong-si, KR;
Dae-young Kwak, Seoul, KR;
Ju-Wan Kim, Seongnam-si, KR;
Kyu-Tae Na, Seoul, KR;
Min Kim, Seoul, KR;
Seung-Bae Park, Yongin-si, KR;
Il-Woo Kim, Hwaseong-si, KR;
Dae-Young Kwak, Seoul, KR;
SAMSUNG Electronics Co., Ltd., Suwon-si, KR;
Abstract
An isolation layer structure includes first to fourth oxide layer patterns. The first and third oxide layer patterns are sequentially formed in a first trench defined by a first recessed top surface of a substrate and sidewalls of gate structures on the substrate in a first region. The first trench has a first width, and the first and third oxide layer patterns have no void therein. The second and fourth oxide layer patterns are sequentially formed in a second trench defined by a second recessed top surface of the substrate and sidewalls of gate structures on the substrate in a second region. The second trench has a second width larger than the first width, and the fourth oxide layer pattern has a void therein.