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Kyu S Min

USPTO Granted Patents = 24 (Patent Applications = 1)

Average Co-Inventor Count = 2.4

ph-index = 7

Forward Citations = 325(Granted Patents)

Company Filing History:

Micron Technology Incorporated

Years Active: 2007-2022

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24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11257838 - Thickened sidewall dielectric for memory cell (2022-02-22),

2. 10608005 - Thickened sidewall dielectric for memory cell (2020-03-31),

3. 9059301 - Self-aligned charge-trapping layers for non-volatile data storage, processes of forming same, and devices containing same (2015-06-16),

4. 8900946 - Method of forming layers using atomic layer deposition (2014-12-02),

5. 8748264 - Self-aligned charge-trapping layers for non-volatile data storage, processes of forming same, and devices containing same (2014-06-10),

6. 8729704 - Multilayer dielectric memory device (2014-05-20),

7. 8643082 - Thickened sidewall dielectric for memory cell (2014-02-04),

8. 8643079 - Nanocrystal formation using atomic layer deposition and resulting apparatus (2014-02-04),

9. 8546944 - Multilayer dielectric memory device (2013-10-01),

10. 8228743 - Memory cells containing charge-trapping zones (2012-07-24),

11. 8183110 - Memory cells, methods of forming dielectric materials, and methods of forming memory cells (2012-05-22),

12. 8058140 - Thickened sidewall dielectric for memory cell (2011-11-15),

13. 7989289 - Floating gate structures (2011-08-02),

14. 7968406 - Memory cells, methods of forming dielectric materials, and methods of forming memory cells (2011-06-28),

15. 7898850 - Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells (2011-03-01),

Title: Kyu S Min - Innovator in Memory Cell Technology

Introduction

Kyu S Min is a renowned inventor based in San Jose, California, with an impressive portfolio comprising 24 patents. His work primarily focuses on advancing memory cell technology, contributing significantly to the field through innovative designs and methods.

Latest Patents

Among his latest contributions is the patent titled "Thickened Sidewall Dielectric for Memory Cell." This invention discloses methods and devices related to memory cell devices that demonstrate enhanced charge retention characteristics. The memory cell operates with an active area defined by the sidewalls of neighboring trenches. A layer of dielectric material is blanket deposited over the memory cell and subsequently etched to create spacers along the sidewalls of the active area. Furthermore, dielectric material is established over the active area, followed by the formation of a charge trapping structure and a control gate on top of the charge trapping structure. Notably, the charge trapping structure may incorporate nanodots, and the width of the spacers ranges between 130% and 170% of the thickness of the dielectric material that separates the charge trapping material from the active area.

Career Highlights

Kyu S Min's professional journey includes significant stints at prominent companies, such as Intel Corporation and Micron Technology Incorporated. His tenure in these organizations has allowed him to leverage and enhance his inventive capabilities, leading to multiple advancements in memory technology.

Collaborations

Throughout his career, Kyu has collaborated with notable professionals, including Durai Vishak Nirmal Ramaswamy and Thomas M Graettinger. These collaborations have not only enriched his innovation process but also fostered a community of thinkers working towards technological advancement.

Conclusion

In conclusion, Kyu S Min continues to be a vital contributor to the field of memory cell technology. Through his innovative patents and collaborations, he is paving the way for future advancements in electronics and memory storage solutions. His dedication to improving charge retention characteristics in memory cells showcases his commitment to innovation and the evolution of technology.

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