Kyosuke Miyagi

Title: Kyosuke Miyagi: Innovator in IGBT Technology

Introduction

Kyosuke Miyagi is a notable inventor hailing from Nishikamo-gun, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of Insulated Gate Bipolar Transistors (IGBTs). With a total of 4 patents to his name, Miyagi's work has had a lasting impact on the industry.

Latest Patents

Miyagi's latest patent focuses on an IGBT and the method of manufacturing the same. This innovative IGBT design includes an emitter region, a top body region formed below the emitter region, a floating region beneath the top body region, and a bottom body region below the floating region. The design also features a trench, a gate insulating film covering the inner face of the trench, and a gate electrode arranged inside the trench. Notably, the distribution of p-type impurities in the top body and floating regions decreases as the distance from the upper end of the top body region increases, reaching a local minimum at a predetermined depth in the floating region.

Career Highlights

Throughout his career, Kyosuke Miyagi has worked with prominent companies in the automotive and electronics sectors. He has been associated with Toyota Motor Corporation and Denso Corporation, where he has applied his expertise in semiconductor technology to advance their product offerings.

Collaborations

Miyagi has collaborated with several talented individuals in his field, including Hidefumi Takaya and Kimimori Hamada. Their combined efforts have contributed to the successful development of innovative technologies.

Conclusion

Kyosuke Miyagi's contributions to IGBT technology and his collaborations with leading companies and professionals highlight his importance in the field of semiconductor innovation. His work continues to influence advancements in technology today.