The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Jan. 26, 2007
Hidefumi Takaya, Nishikamo-gun, JP;
Kimimori Hamada, Toyota, JP;
Kyosuke Miyagi, Nishikamo-gun, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Abstract
A semiconductor 100 has a Pbody region and an Ndrift region in the order from an upper surface side thereof. A gate trench and a terminal trench passing through the Pbody region are formed. The respective trenches are surrounded with P diffusion regions at the bottom thereof. The gate trench builds a gate electrode therein. A Pdiffusion region, which is in contact with the end portion in a lengthwise direction of the gate trench and is lower in concentration than the Pbody region and the P diffusion region, is formed. The Pdiffusion region is depleted prior to the P diffusion region when the gate voltage is off. The Pdiffusion region serves as a hole supply path to the P diffusion region when the gate voltage is on.