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For the Inventor, By the Inventor

Yongin-si, South Korea

Kyomin Sohn

USPTO Granted Patents = 31 

 

Average Co-Inventor Count = 4.2

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:

goldMedal31 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2020-2025

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31 patents (USPTO):Explore Patents
1. 12431177 - Memory device, memory module, and operating method of memory device for processing in memory (2025-09-30),
2. 12423182 - Memory device and operation method thereof (2025-09-23),
3. 12417143 - Memory system, method of operating the same, and electronic system including the same (2025-09-16),
4. 12399847 - Memory device including processing circuit, and electronic device including system on chip and memory device (2025-08-26),
5. 12387810 - Memory devices and electronic devices outputting event data related to occurrences of errors and operating methods of memory devices (2025-08-12),
6. 12386545 - Memory device for reducing timing parameters and power consumption for internal processing operation and method of implementing the same (2025-08-12),
7. 12354689 - Error correction code circuit, memory device including error correction code circuit, and operation method of error correction code (2025-07-08),
8. 12354637 - Memory devices and methods thereof for managing row hammer events therein (2025-07-08),
9. 12347477 - Integrated circuit memory devices having efficient row hammer management and memory systems including the same (2025-07-01),
10. 12334953 - Memory controllers and memory systems including the same (2025-06-17),
11. 12332787 - Memory system performing cache bypassing operation and cache management method thereof (2025-06-17),
12. 12315559 - Latch-based storage circuits having efficient integrated circuit layouts (2025-05-27),
13. 12236996 - Memory device and refresh method thereof (2025-02-25),
14. 12182409 - Backward compatible processing-in-memory (PIM) protocol (2024-12-31),
15. 12087388 - Method of performing internal processing operations with pre-defined protocol interface of memory device (2024-09-10),

Title: Exploring the Innovations of Kyomin Sohn

Introduction: Kyomin Sohn is an accomplished inventor based in Yongin-si, South Korea, recognized for his contributions to the field of memory devices. With an impressive portfolio of 19 patents, he continues to push the boundaries of technology and innovation within his work environment.

Latest Patents: Among his latest innovations are two notable patents. The first is a "Memory device and refresh method thereof," which involves advanced methods for managing memory access and refresh operations. This device employs counters for better tracking of row accesses and incorporates a refresh control circuit that optimizes the memory refreshing process. The second patent, "Backward compatible processing-in-memory (PIM) protocol," introduces a memory device that supports a PIM protocol. This device utilizes a mode register set to store critical parameter codes, enabling it to adapt operation protocols to enhance its functionality in processing tasks effectively.

Career Highlights: Kyomin Sohn has made significant strides in the technology sector, particularly through his employment at Samsung Electronics Co., Ltd. His work at this leading global company has had a lasting impact on the development of memory technology, contributing to innovations that are integral to modern computing and electronics.

Collaborations: Throughout his career, Kyomin has collaborated with talented individuals such as Jaeyoun Youn and Seongil O. These partnerships have fostered a creative and productive environment, leading to the successful development of various innovative projects and patents within the company.

Conclusion: Kyomin Sohn exemplifies innovation in the field of memory technology through his extensive patent portfolio and collaborative efforts at Samsung Electronics Co., Ltd. His work is a testament to the relentless pursuit of technological advancement and highlights the critical role of inventors in shaping the future.

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