Seongnam-si, South Korea

Kwan-Yong Lim

USPTO Granted Patents = 2 

Average Co-Inventor Count = 6.5

ph-index = 2

Forward Citations = 30(Granted Patents)


Company Filing History:


Years Active: 2012-2014

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2 patents (USPTO):Explore Patents

Title: Kwan-Yong Lim: Innovator in Semiconductor Technology

Introduction

Kwan-Yong Lim is a prominent inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to device manufacturing.

Latest Patents

One of his latest patents is a method for manufacturing semiconductor devices. This invention involves forming a semiconductor device with a gate pattern on a substrate, which includes a recrystallized region that has a stacking fault defect. This design aims to reduce leakage current and improve channel conductivity. Another notable patent focuses on methods of forming transistors and CMOS semiconductor devices using a stress memorization technique (SMT). This method induces stress in the channel region by implanting impurities into a substrate adjacent to a gate electrode structure, creating an amorphous region that is later recrystallized to induce compressive stress.

Career Highlights

Kwan-Yong Lim is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing the efficiency and performance of semiconductor devices.

Collaborations

He has collaborated with notable coworkers, including Seok-Hoon Kim and Chung-Geun Koh, contributing to a dynamic team focused on cutting-edge technology.

Conclusion

Kwan-Yong Lim's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a key innovator in the industry. His inventions are paving the way for advancements in semiconductor device performance and efficiency.

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