Samsung Electronics Co., Ltd.

Kwan-Yong Lim

Sang-Bom Kang

Hyun-jung Lee

Seok-Hoon Kim

Tae-Ouk Kwon

Chung-Geun Koh

Ui-hui Kwon

A semiconductor device is formed with a gate pattern formed on a substrate, and a recrystallized region having a stacking fault defect in the substrate at one side of the gate pattern. The semiconductor device can have a reduced leakage current and improved channel conductivity.

Method for manufacturing semiconductor device

A method of forming a transistor induces stress in the channel region using a stress memorization technique (SMT). Impurities are implanted into a substrate adjacent a gate electrode structure to produce an amorphous region adjacent the channel region. The amorphous region is then recrystallized by forming a metal-oxide layer over the amorphous region, and then thermally treating the same. The crystallization creates compressive stress in the amorphous region. As a result, stress is induced in the channel region of the substrate located under the gate electrode structure.

Methods of forming transistors and CMOS semiconductor devices using an SMT technique

Growing community of inventors

Seongnam-si, South Korea

Kwan-Yong Lim