The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Sep. 22, 2011
Applicants:
Kwan-yong Lim, Seongnam-si, KR;
Chung-geun Koh, Seoul, KR;
Sang-bom Kang, Seoul, KR;
Ui-hui Kwon, Hwaseong-si, KR;
Hyun-jung Lee, Suwon-si, KR;
Tae-ouk Kwon, Hwaseong-si, KR;
Seok-hoon Kim, Hwaseong-si, KR;
Inventors:
Kwan-Yong Lim, Seongnam-si, KR;
Chung-Geun Koh, Seoul, KR;
Sang-Bom Kang, Seoul, KR;
Ui-Hui Kwon, Hwaseong-si, KR;
Hyun-Jung Lee, Suwon-si, KR;
Tae-Ouk Kwon, Hwaseong-si, KR;
Seok-Hoon Kim, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device is formed with a gate pattern formed on a substrate, and a recrystallized region having a stacking fault defect in the substrate at one side of the gate pattern. The semiconductor device can have a reduced leakage current and improved channel conductivity.