Kuo-Wei Cheng

Title: Kuo-Wei Cheng: Innovator in Electrochemical Deposition Technology

Introduction

Kuo-Wei Cheng is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the area of electrochemical deposition. His innovative methods have paved the way for advancements in the fabrication of metal layers on substrates.

Latest Patents

Kuo-Wei Cheng holds a patent for a "Method and apparatus for fabricating metal layer." This patent describes a method of electrochemical deposition (ECD) that provides a barrier and a seed layer on a substrate. The process involves pre-treating the surfaces of the substrate before electrochemically depositing a metal layer in an electrochemical plating cell. The cell is designed to prevent evaporation of the electrolyte solution and includes a substrate holder assembly with a lift seal, ensuring effective deposition.

Career Highlights

Kuo-Wei Cheng is associated with Taiwan Semiconductor Manufacturing Company Limited, where he has been instrumental in developing advanced manufacturing techniques. His work has contributed to the efficiency and effectiveness of semiconductor production processes.

Collaborations

Throughout his career, Kuo-Wei Cheng has collaborated with notable colleagues, including Hung-Wen Su and Hsien-Ming Lee. These collaborations have further enhanced the innovation and development of new technologies in the semiconductor industry.

Conclusion

Kuo-Wei Cheng's contributions to electrochemical deposition technology highlight his role as a key inventor in the semiconductor field. His innovative methods continue to influence the industry and drive advancements in manufacturing processes.