Kuo-Tung Sung

Title: Kuo-Tung Sung: Innovator in CMOS Technology

Introduction

Kuo-Tung Sung is an accomplished inventor based in Zhudong Town, Taiwan. With a total of three patents to his name, he has made significant contributions to the field of semiconductor technology, particularly in the development of advanced MOS devices.

Latest Patents

Among his notable innovations, Kuo-Tung Sung's latest patent involves a cascode CMOS structure. This MOS device features an active area that includes first and second contacts, with first and second gates located between them. The first gate, which is positioned adjacent to the first contact, has a third contact, while the second gate, situated next to the second contact, includes a fourth contact coupled to the third contact. This inventive configuration allows for the creation of transistors, where one defined by the active area and the first gate has a specific threshold voltage, while another defined by the active area and second gate possesses a different threshold voltage. This breakthrough design improves the performance and efficiency of MOS devices.

Career Highlights

Kuo-Tung Sung currently works at Taiwan Semiconductor Manufacturing Company Limited (TSMC), a leading player in the semiconductor industry. His role at TSMC allows him to apply his expertise in innovations and collaborate with other talented professionals.

Collaborations

Throughout his career, Kuo-Tung Sung has engaged in fruitful collaborations with esteemed colleagues such as Fu-Lung Hsueh and Chih-Ping Chao. Working alongside such talented individuals has fostered an environment of innovation and progress within his field.

Conclusion

Kuo-Tung Sung’s contributions to the semiconductor industry, particularly through his innovative cascode CMOS structure, highlight his role as a prominent inventor. His achievements not only showcase his technical skills but also contribute to the advancement of semiconductor technologies that enhance electronic devices globally.