The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Aug. 21, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Fu-Lung Hsueh, Kaohsiung, TW;
Chih-Ping Chao, Jhudong Town, TW;
Chewn-Pu Jou, Hsinchu, TW;
Yung-Chow Peng, Hsinchu, TW;
Harry-Hak-Lay Chuang, Crescent, SG;
Kuo-Tung Sung, Zhudong Town, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A MOS device includes an active area having first and second contacts. First and second gates are disposed between the first and second contacts. The first gate is disposed adjacent to the first contact and has a third contact. The second gate is disposed adjacent to the second contact and has a fourth contact coupled to the third contact. A transistor defined by the active area and the first gate has a first threshold voltage, and a transistor defined by the active area and the second gate has a second threshold voltage.