Taiwan Semiconductor Manufacturing Comp. Ltd.

Kuo-Tung Sung

Chewn-Pu Jou

Harry-Hak-Lay Chuang

Yung-Chow Peng

Fu-Lung Hsueh

Chih-Ping Chao

Li-Chun Tien

Yung-Chin Hou

Yuh-Jier Mii

A MOS device includes an active area having first and second contacts. First and second gates are disposed between the first and second contacts. The first gate is disposed adjacent to the first contact and has a third contact. The second gate is disposed adjacent to the second contact and has a fourth contact coupled to the third contact. A transistor defined by the active area and the first gate has a first threshold voltage, and a transistor defined by the active area and the second gate has a second threshold voltage.

Cascode CMOS structure

The present disclosure provides a device in an integrated circuit. The device includes an active region in a semiconductor substrate; an isolation region adjacent the active region; a gate disposed on the active region and extending to the isolation region in a first direction; and a gate contact disposed within the isolation region, having a portion directly overlying and contacting the gate, and having a geometry horizontally extending to a first dimension in the first direction and a second dimension in a second direction approximately perpendicular to the first direction. The first dimension is greater than the second dimension.

Contact implement structure for high density design

Growing community of inventors

Zhudong Town, Taiwan

Kuo-Tung Sung