Kun-Zen Chang

Title: Innovations of Kun-Zen Chang

Introduction

Kun-Zen Chang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of electronics, particularly in the development of advanced semiconductor technologies. With a total of nine patents to his name, Chang's work has had a substantial impact on the industry.

Latest Patents

One of his latest inventions is the "Guard ring structure with deep N well on ESD devices." In this invention, a deep N-type wall is created surrounding an area that contains an ESD device or circuit. The ESD device is connected to a chip pad and is first surrounded by a P+ guard ring. The P+ guard ring is then surrounded by the deep N-type wall to block excess current from an ESD event or voltage overshoot from reaching the internal circuitry. The deep N-type wall comprises an N+ diffusion within an N-well, which is on top of a deep N-well. The height of the deep N-type wall is approximately 4 to 6 micrometers, providing a capability to absorb much of the current from an ESD event or voltage overshoot.

Another notable patent is the "High performance DRAM structure employing multiple thickness gate oxide." This invention describes a DRAM device that has improved performance of peripheral circuitry. The performance is enhanced by selectively having MOS transistors with a thinner gate oxide in peripheral circuits that have a lower voltage applied to their gate electrodes. The DRAM device maintains reliability by having MOS transistors with a thicker gate oxide in the memory cells and selected peripheral circuitry that are subjected to a higher voltage at their gate electrodes. Furthermore, this invention describes methods of fabricating the DRAM device with selectively placed multiple gate oxide thickness.

Career Highlights

Throughout his career, Kun-Zen Chang has worked with notable companies such as Etron Technology, Inc. and the Industrial Technology Research Institute. His expertise in semiconductor technology has made him a valuable asset in these organizations.

Collaborations

Chang has collaborated with several talented individuals in his field, including Nicky C. Lu and Ching-Yuan Lin. Their combined efforts have contributed to the advancement of technology in the semiconductor industry.

Conclusion

Kun-Zen Chang's innovative work in semiconductor technology has led to significant advancements in ESD devices and DRAM structures. His contributions continue to influence the industry and