The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1993
Filed:
Mar. 20, 1991
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H03K / ; H01L / ;
U.S. Cl.
CPC ...
307304 ; 257328 ; 257339 ; 257342 ; 307571 ; 307573 ; 307585 ;
Abstract
A double polysilicon dual gate LDMOSFET structure combined with a detecting circuit can be used to reduce the ON state resistance and without degradation of the breakdown voltage of the LDMOSFET. In the ON state, a drift region is driven into accumulation. In the OFF state, a gate is made to float and thereby avoid degradation of the breakdown voltage. A switch or transistor is modulated to either allow applied voltage to bias the gate for enabling the drift region to be driven into accumulation or to cause the gate to float to prevent the driving of the drift region by the voltage.