The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 1994
Filed:
Aug. 08, 1991
Applicant:
Inventor:
Kun-Zen Chang, Hsinchu, TW;
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B / ;
U.S. Cl.
CPC ...
428210 ; 428336 ; 428428 ; 428432 ; 428446 ; 428472 ; 428702 ; 428901 ; 428701 ; 257347 ;
Abstract
An improved field effect transistor having a source region, a drain region, and channel region in a polycrystalline silicon layer, the improvement being that the polycrystalline silicon layer has approximately equal concentrations of N and P type dopants embodied therein, which serves to restrain movement of P/N junctions.