Kinmen County, Taiwan

Kun-Ti Lee


Average Co-Inventor Count = 3.9

ph-index = 2

Forward Citations = 4(Granted Patents)


Location History:

  • Hsinchu County, TW (2012)
  • Kinmen County, TW (2015 - 2016)
  • Hsinchu, TW (2016)

Company Filing History:


Years Active: 2012-2016

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5 patents (USPTO):Explore Patents

Title: Kun-Ti Lee: Pioneering Innovations in Static Memory Technology

Introduction:

Kun-Ti Lee, a visionary inventor hailing from Kinmen County, TW, has made significant contributions to the field of technology. With a total of 5 patents to his name, Kun-Ti Lee's inventive spirit and dedication to excellence have shaped the landscape of modern technology.

Latest Patents:

1. Static Memory Apparatus and Static Memory Cell Thereof: Kun-Ti Lee's innovative static memory cell design includes a data latch circuit, data write-in circuit, and data read-out circuit. The circuit offers reliability and efficiency in data storage and retrieval processes.

2. Static Memory Apparatus and Data Reading Method Thereof: Kun-Ti Lee's static memory apparatus features a unique design incorporating memory cells, dummy memory cells, a sense amplifier, and a discharge current adjuster. This design enhances data sensing, amplification, and readout processes.

Career Highlights:

Throughout his career, Kun-Ti Lee has been associated with esteemed organizations such as Faraday Technology Corporation and National Chiao Tung University. His tenure at these institutions has been marked by groundbreaking research and innovative technological advancements.

Collaborations:

Kun-Ti Lee's work has been enriched by collaborations with talented individuals such as Zhao-Yong Zhang and Hung-Yu Li. Together, they have contributed to the development of cutting-edge technologies in the realm of static memory apparatus.

Conclusion:

In conclusion, Kun-Ti Lee's innovative spirit and technical expertise have solidified his reputation as a pioneering inventor in the field of technology. His patents and collaborations underscore his commitment to pushing the boundaries of innovation and enhancing the world of static memory technology.

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