The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2012
Filed:
May. 10, 2010
Hung-yu LI, Pingtung County, TW;
Wade Wang, Suzhou Industrial Park, CN;
Rick Zheng, Suzhou Industrial Park, CN;
James MA, Suzhou Industrial Park, CN;
Kun-ti Lee, Hsinchu County, TW;
Chia-cheng Chen, Taichung County, TW;
Hung-Yu Li, Pingtung County, TW;
Wade Wang, Suzhou Industrial Park, CN;
Rick Zheng, Suzhou Industrial Park, CN;
James Ma, Suzhou Industrial Park, CN;
Kun-Ti Lee, Hsinchu County, TW;
Chia-Cheng Chen, Taichung County, TW;
Faraday Technology Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A memory circuit includes a first memory array, a second memory array and a switch module, wherein the first memory array has a first node and a second node, the second memory array has a third node and a fourth node, the first node is coupled to a first supply voltage, and the fourth supply voltage is coupled to a second supply voltage smaller than the first supply voltage. The switch module is coupled to the second node, the third node, the first supply voltage and the second supply voltage. When the memory circuit is operated under an inactive mode, the switch module electrically connects the second node to the third node, electrically disconnects the second node from the second supply voltage, and electrically disconnects the third node from the first supply voltage.