Pingtung, Taiwan

Hung-Yu Li

This inventor holds 2 USPTO granted patents. Top assignees: Faraday Technology Corporation, National Yang Ming Chiao Tung University. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hung-Yu Li. Retrieved from https://idiyas.com/inventor/hung-yu-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.2

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2012

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2 patents (USPTO):Explore Patents

Title: Innovations of Inventor Hung-Yu Li

Introduction

Hung-Yu Li is a notable inventor based in Pingtung County, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and reliability of memory circuits.

Latest Patents

One of his latest patents is for a "Disturb-free static random access memory cell." This invention includes a latch circuit with access terminals and multiple switching circuits designed to improve data integrity during memory operations. Another significant patent is for a "Memory circuit and method for controlling memory circuit." This invention features a dual memory array system that optimizes power consumption by managing supply voltages effectively during inactive modes.

Career Highlights

Hung-Yu Li has worked with prominent organizations such as Faraday Technology Corporation and National Yang Ming Chiao Tung University. His experience in these institutions has allowed him to develop innovative solutions in memory technology.

Collaborations

He has collaborated with notable colleagues, including Kun-Ti Lee and Ching-Te Chuang, contributing to advancements in their respective fields.

Conclusion

Hung-Yu Li's contributions to memory technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to impact the development of efficient memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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