The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Apr. 14, 2016
Faraday Technology Corporation, Suzhou, CN;
Faraday Technology Corp., Hsinchu, TW;
Zhao-Yong Zhang, Suzhou, CN;
Kun-Ti Lee, Hsinchu, TW;
FARADAY TECHNOLOGY CORPORATION, Suzhou, Jiangsu Province, CN;
Faraday Technology Corp., Hsin-Chu, TW;
Abstract
A static memory apparatus and a static memory cell thereof are provided. The static memory cell includes a data latch circuit, a data write-in circuit and a data read-out circuit. The data latch circuit has a first tristate output inverting circuit and a second tristate output inverting circuit. The data write-in circuit provides a first reference voltage to a power receiving terminal of a selected tristate output inverting circuit which is one of the first and second tristate output inverting circuits, and provides a second reference voltage to an input terminal of the selected tristate output inverting circuit during a data write-in time period. The data read-out circuit generates read-out data according to a voltage at an output terminal of the second tristate output inverting circuit and the second reference voltage during a data read-out time period.